Material and method for manufacturing semiconductor on insulator substrates and devices
US6720620B1 · kind B1 · utility
4Cited by
4References
64Claims
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Assignee
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Key dates
| Filing date | Apr 14, 2003 |
| Grant date | Apr 13, 2004 |
| Priority date | — |
| Expiry date | Apr 14, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is formed from a semiconductor on insulator substrate, with the insulator or dielectric layer being formed from a polymer precursor to ceramic. The polymer precursor to ceramic may be SiC, diamond, or diamond-like carbon. The resulting device has improved thermal properties, smoothness, dielectric properties, ease of processing, and performance. A method of making the semiconductor device is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.