Designs of reference cells for magnetic tunnel junction (MTJ) MRAM
US6721203B1 · kind B1 · utility
154Cited by
8References
41Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2001 |
| Grant date | Apr 13, 2004 |
| Priority date | — |
| Expiry date | Apr 11, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A reference cell circuit for a magnetic tunnel junction MRAM includes a first magnetic tunnel junction device set to a low resistance state and a second magnetic tunnel junction device set to a high resistance state. A reference cell series unit includes the first magnetic tunnel junction device electrically coupled in series with the second magnetic tunnel junction device. The reference cell series unit further has a first end and a second end with the first end being electrically coupled to a first current source and the second end being electrically coupled to a current sink and a second current source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.