Method for the sulphidation treatment of III-V compound semiconductor surfaces
US6723578B2 · kind B2 · utility
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4Claims
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Key dates
| Filing date | May 30, 2002 |
| Grant date | Apr 20, 2004 |
| Priority date | — |
| Expiry date | May 30, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method for deoxidizing and passivating, by sulphidation, a surface of a III-V compound semiconductor material undergo strong oxidation in the presence of oxygen, wherein the surface to be passivated is immersed in a dilute aqueous solution containing sulphide ions with a concentration of between about 10−1M and 10−7M.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.