Semiconductor devices and their peripheral termination
US6724021B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2002 |
| Grant date | Apr 20, 2004 |
| Priority date | — |
| Expiry date | Oct 19, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/118
Abstract
A semiconductor device, such as a power MOSFET, Schottky rectifier or p-n rectifier, has a voltage-sustaining zone (20) between a first (21, 23, 31a) and second (22) device regions adjacent to respective first and second opposite surfaces (11, 12) of a semiconductor body 10. Trenched field-shaping regions (40) including a resistive path (42) extend through the voltage-sustaining zone (20) to the underlying second region (22), so as to enhance the breakdown voltage of the device. The voltage-sustaining zone (20) and the trenched field-shaping regions (40) are present in both the active device area (A) and in the peripheral area (P) of the device. A further resistive path (53) extends across the first surface (11), outwardly over the peripheral area (P). This further resistive path (53) provides a potential divider that is connected to the respective resistive paths (42) of successive underlying trenched field-shaping regions (40) in the peripheral area (P). Thereby a gradual variation is achieved in the potential (V2) applied by the successive trenched field-shaping regions (40) in the peripheral area (P) of the voltage-sustaining zone (20). This advantageous peripheral termination …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.