Field effect transistor, especially for use as a sensor element or acceleration sensor

US6724023B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Klaus Heyers · Reutlingen, DE
• Bernhard Elsner · Bad Berka, DE

Key dates

• Filing date: Apr 19, 2001
• Grant date: Apr 20, 2004
• Expiry date: Apr 19, 2021

Classification

• Technology area (CPC G): Physics
• CPC primary: G01P2015/0814
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A field effect transistor suited for use as a sensor element or in an acceleration sensor is described. For this purpose, the field effect transistor within a planar substrate has a drain area and a source area, which are separated from each other by a channel region. In addition, a gate electrode is provided which is arranged so as to be substantially self-supporting above the substrate over the channel region. The gate electrode is flexibly supported such that an external force acting upon it which has a component acting parallel to the surface of the substrate causes a deflection of the gate electrode parallel to the surface of the substrate. A method is also described in which, in a first method step, an integrated circuit having a drain area, a source area, and a channel region is manufactured or made available in a CMOS process, and thereafter, in a second method step, the substantially self-supporting gate electrode is produced on the integrated circuit using electroplating additive technology.