Magnetoresistive element and device utilizing magnetoresistance effect
US6724585B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 20, 1999 |
| Grant date | Apr 20, 2004 |
| Priority date | — |
| Expiry date | Sep 20, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3967
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention provides a magnetoresistive device including a multi-layered structure of a free magnetic layer, a non-magnetic non-conductive layer in contact with the free magnetic layer, a pinned layer in contact with the non-magnetic non-conductive layer, and a pinning layer in contact with the pinned layer for pinning a magnetization direction of the pinned layer, wherein at least any one of the free magnetic layer and the pinned layer has an interface region abutting the non-magnetic non-conductive layer, and at least a part of the interface region includes at least one material selected from the group consisting of CoFeB, CoZrMo, CoZrNb, CoZr, CoZrTa, CoHf, CoTa, CoTaHf, CoFeTi, CoNbHf, CoHfPd, CoTaZrNb, and CoZrMoNi.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.