Integrated semiconductor memory device having quantum well buried in a substrate

US6724660B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Thomas Skotnicki · Meylan, FR
• Stephane Monfray · Eybens, FR
• Michel Haond · Meylan, FR

Key dates

• Filing date: Dec 12, 2001
• Grant date: Apr 20, 2004
• Expiry date: Jan 14, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/116

Abstract

An electronic device, such as an opto-electronic device and an integrated semiconductor memory device, includes at least one integrated memory point structure including a quantum well semiconductor area buried in the substrate of the structure and disposed under the insulated gate of a transistor. A biasing voltage source is adapted to bias the structure to enable charging or discharging of charges in the quantum well or outside the quantum well.