Patent · US Expired

Memory reading device

US6724673B2 · kind B2 · utility

3Cited by
11References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 15, 2002
Grant dateApr 20, 2004
Priority date
Expiry dateMar 15, 2022

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C16/28
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

The invention concerns a device for reading a storage cell (4), comprising a reading differential amplifier (18) having a first input terminal (16) connected to a column of cells (10) and a circuit (34) designed to feed to a second input terminal (20) of the amplifier (18) a reference voltage (Vref). The circuit (34) comprises means (38) for storing the voltage of said column and means (38, 40, 42) for applying as reference voltage (Vref) the stored voltage modified by a predetermined quantity.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.