Optoelectronic devices and method of production
US6724798B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2001 |
| Grant date | Apr 20, 2004 |
| Priority date | — |
| Expiry date | Mar 14, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention includes both devices and methods of production. A device in accordance with the invention includes a top surface and a bottom surface, a through wafer via extending from the top surface to the bottom surface, an optoelectronic structure and an ion implanted isolation moat, wherein the optoelectronic structure and the through wafer via are enclosed within the isolation moat. A method in accordance with the invention is a method of producing a device that includes the steps of forming an optoelectronic structure, forming a through wafer via, extending from a top surface to a bottom surface of the device and forming an ion implanted isolation moat, wherein the through wafer via and the optoelectronic structure are enclosed by the isolation moat.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.