Method of crystallizing amorphous silicon
US6726768B2 · kind B2 · utility
16Cited by
0References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 30, 2002 |
| Grant date | Apr 27, 2004 |
| Priority date | — |
| Expiry date | Oct 4, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A mask and its application in sequential lateral solidification (SLS) crystallization of amorphous silicon. The mask includes a light absorptive portion that blocks a laser beam and a plurality of tier-shaped light-transmitting portions that pass a laser beam. Each light-transmitting portion has a plurality of adjacent rectangular sub-portions. Adjacent rectangular sub-portions form a step. In operation, the mask moves transversely relative to a amorphous silicon film while a laser performs SLS crystallization. The light portions control grain growth such that high quality polycrystalline silicon is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.