Ion beam sputtering apparatus, method for forming a transparent and electrically conductive film, and process for the production of a semiconductor device
US6726812B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 4, 1998 |
| Grant date | Apr 27, 2004 |
| Priority date | — |
| Expiry date | Mar 4, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/46
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An ion beam sputtering apparatus comprising: a first means for generating an ion beam and directing said ion beam in a prescribed direction, a second means for supporting a target at a position where said target is capable of exposing said ion beam irradiated in said prescribed direction and of being sputtered by said ion beam, a third means for supporting an electrically conductive substrate having a semiconductor layer on which a component sputtered from said target is to be deposited, and a fourth means for making said electrically conductive substrate have a non-earth potential. A method for forming a transparent and electrically conductive film on an electrically conductive substrate having a semiconductor layer, which is based on said ion beam sputtering apparatus. A process for producing a semiconductor device by forming a transparent and electrically conductive film on a semiconductor layer for said semiconductor device, which is based on said ion beam sputtering apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.