Method of fabricating long wavelength vertical-cavity surface-emitting lasers
US6727109B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2002 |
| Grant date | Apr 27, 2004 |
| Priority date | — |
| Expiry date | Jul 31, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8162
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to a method of fabricating vertical-cavity surface emitting lasers being watched as a light source for long wavelength communication. The present invention includes forming a layer having a high resistance near the surface by implanting heavy ions such as silicon (Si), so that the minimum current injection diameter is made very smaller unlike implantation of a proton. Further, the present invention includes regrowing crystal so that current can flow the epi surface in parallel to significantly reduce the resistance up to the current injection part formed by silicon (Si) ions. Therefore, the present invention can not only effectively reduce the current injection diameter but also significantly reduce the resistance of a device to reduce generation of a heat. Further, the present invention can further improve dispersion of a heat using InP upon regrowth and thus improve the entire performance of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.