Silica-based optical device fabrication
US6727110B2 · kind B2 · utility
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9References
23Claims
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Key dates
| Filing date | Nov 8, 2001 |
| Grant date | Apr 27, 2004 |
| Priority date | — |
| Expiry date | Apr 10, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C28/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus for fabricating silica-based waveguide devices on a substrate using a low temperature PECVD process using a TEOS source material for depositing waveguide layers containing silica, the apparatus being arranged, in use, in a manner such that a liquid source material containing silicon is used during the PECVD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.