Buried hetero-structure opto-electronic device
US6727112B2 · kind B2 · utility
1Cited by
13References
40Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2001 |
| Grant date | Apr 27, 2004 |
| Priority date | — |
| Expiry date | Aug 16, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2215
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing a semiconductor optical device comprising the steps of: providing a substrate having an active layer thereon; providing an aluminium-bearing layer, the aluminium bearing layer being adjacent the active layer; and oxidising the aluminium-bearing layer substantially entirely.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.