Manufacturing method for semiconductor storage device
US6727144B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 31, 2002 |
| Grant date | Apr 27, 2004 |
| Priority date | — |
| Expiry date | Oct 31, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
Abstract
A manufacturing method for a semiconductor storage device with a floating gate includes a first step for depositing a first thermally-oxidized film (14) on a poly-silicon film (12) that has been etched to a desired depth so as to have a tapered etched end by using a silicon nitride film (13) having an opening as a mask, a step for depositing a first NSG film side wall spacer (115) that covers the tapered portion on an opening side wall of the silicon nitride film (13) and adding heat treatment thereto, a step for forming a second NSG film side wall spacer (15) on the inner side of the first NSG film side wall spacer 115, a step for forming a poly-silicon plug (18), then depositing a second thermally-oxidized film (19) on the poly-silicon plug (18), a step for removing the silicon nitride film (13), then etching the poly-silicon film (12), and a step for removing the first NSG film side wall spacer (115).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.