Diamond pn junction diode and method for the fabrication thereof
US6727171B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Feb 20, 2003 |
| Grant date | Apr 27, 2004 |
| Priority date | — |
| Expiry date | Feb 20, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/305
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A diamond pn junction diode includes a p-type diamond thin-film layer formed on a substrate and an n-type diamond thin-film layer formed by forming a high-quality undoped diamond thin-film layer on the p-type diamond thin-film layer and ion-implanting an impurity into the high-quality undoped diamond thin-film layer, or alternatively includes an n-type diamond thin-film layer formed on a substrate and a p-type diamond thin-film layer formed by forming a high-quality undoped diamond thin-film layer on the n-type diamond thin-film layer and ion-implanting an impurity into the high-quality undoped diamond thin-film layer. A method of fabricating a diamond pn junction diode includes the steps of forming a p-type diamond thin-film layer on a substrate, forming a high-quality undoped diamond thin-film layer on the p-type diamond thin-film layer, and making the high-quality undoped diamond thin-film layer an n-type diamond thin-film layer by ion implantation of an impurity, or alternatively includes the steps of forming an n-type diamond thin-film layer on a substrate, forming a high-quality undoped diamond thin-film layer on the n-type diamond thin-film layer, and making the high-quality…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.