Diode comprising a metal semiconductor contact and a method for the production thereof
US6727525B1 · kind B1 · utility
4Cited by
2References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 13, 2002 |
| Grant date | Apr 27, 2004 |
| Priority date | — |
| Expiry date | May 20, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/60
Abstract
A diode includes a semiconductor substrate that is arranged between two metallic electrodes, having a strongly doped first zone that forms an ohmic transition to the first electrode, a weakly doped second zone, having the same conductivity type, that forms a rectifying transition to the second electrode, and a third zone that, having the same conductivity type, is doped more weakly than the second zone. The third zone separates the first and the second zones from one another, and the second zone is enclosed between the second electrode and the third zone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.