Magnetic memory cell
US6727537B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 8, 2002 |
| Grant date | Apr 27, 2004 |
| Priority date | — |
| Expiry date | Jul 8, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device based on easy domain wall propagation and the extraordinary Hall effect includes a perpendicular-to-plane a magnetic electrically conductive element (2) that includes a memory node (3). Electrical conductors (12-15) surround the node (3) so that when energised, a magnetic field is produced to change the magnetization state of the node (3). In memory state “0” a magnetic domain is pinned within tapered portion (5) of the element (2). When a magnetic field is applied to the device, the domain (D) becomes unpinned and extends into the node (3) to produce a “1” state. The state of magnetization is sensed by means of a Hall contact (11). The current pulse (Jc) is applied through the element (2) so that the Hall voltage can be detected.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.