Semiconductor device with improved bonding
US6727593B2 · kind B2 · utility
26Cited by
2References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2002 |
| Grant date | Apr 27, 2004 |
| Priority date | — |
| Expiry date | Feb 28, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12042
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.