Widely wavelength tunable integrated semiconductor device and method for widely tuning semiconductor devices
US6728279B1 · kind B1 · utility
57Cited by
7References
20Claims
0Family size
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Key dates
| Filing date | May 16, 2000 |
| Grant date | Apr 27, 2004 |
| Priority date | — |
| Expiry date | May 16, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/1218
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Alternative laser structures, which have potentially the same tuning performance as (S)SG-DBR and GCSR lasers, and a fabrication process which is similar to that of the (S)SG-DBR laser, are presented. The advantage of these structures is that the output power does not pass through a long passive region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.