Semiconductor device and method for fabricating the same
US6730574B2 · kind B2 · utility
3Cited by
10References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2001 |
| Grant date | May 4, 2004 |
| Priority date | — |
| Expiry date | Apr 1, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/05
Abstract
The semiconductor device includes a MOSFET including a pair of impurity diffused regions formed on both sides of a gate formed on a semiconductor substrate; an insulation film covering a top of the MOSFET and having a through-hole opened on one of the impurity diffused regions formed in; and a capacitor formed at at least a part of an inside of the through-hole, the through-hole having a larger diameter inside than at a surface thereof or having a larger diameter at an intermediate part between the surface thereof and a bottom thereof than the surface and the bottom thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.