Method of forming a thin film in a semiconductor device
US6730614B1 · kind B1 · utility
601Cited by
7References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2003 |
| Grant date | May 4, 2004 |
| Priority date | — |
| Expiry date | Aug 22, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45542
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a method of forming a thin film in a semiconductor device. According the method, the thin film is formed by alternately repeating an atomic layer deposition (ALD) method and a plasma enhanced atomic layer deposition (PEALD) method and further by adjusting the ratio of repetition times of the methods, so that it is possible to adjust and estimate the growth rate, density, and material properties such as refraction index, dielectric constant, electric resistance, etc.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.