Thin film transistor and fabrication method of the same
US6730970B1 · kind B1 · utility
44Cited by
14References
13Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 14, 2000 |
| Grant date | May 4, 2004 |
| Priority date | — |
| Expiry date | Nov 14, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2201/123
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A voltage of a front channel 42 (gate side wiring) of a thin film transistor is made equal to a voltage of a back channel 44 (liquid crystal alignment side) thereof by electrically connecting a gate electrode 2 and a back channel electrode 82 through a gate contact hole 10 to a semiconductor layer 4 constituting the thin film transistor. The thin film transistor is fabricated through four patterning steps by simultaneously etching the semiconductor layer and a transparent electrode by using a photo resist on the front channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.