High frequency power device with a plastic molded package and direct bonded substrate
US6731002B2 · kind B2 · utility
44Cited by
36References
24Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 13, 2001 |
| Grant date | May 4, 2004 |
| Priority date | — |
| Expiry date | Nov 13, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A radio frequency power device includes a substrate including a first conductive layer, a second dielectric layer, and a third conductive layer. The first conductive layer is bonded to the second dielectric layer, and the second dielectric layer is bonded to the third conductive layer. The first and third conductive layers are electrically isolated from each other. A semiconductor die is bonded to the first conductive layer of the substrate. A plastic package encloses and protects the semiconductor die. A plurality of leads extend outwardly from the plastic package. The leads have blade-like shapes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.