Method for producing magnetoresistive heads ion bombardment etch to stripe height
US6732421B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2002 |
| Grant date | May 11, 2004 |
| Priority date | — |
| Expiry date | Mar 22, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/53165
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method for producing magnetoresistive heads includes the steps of placing a substrate having a plurality of transducers in an environment including a focused ion beam. The focused ion beam is directed onto the first MR element. A property level, generally the resistance associated with the MR stripe, of the first MR element is monitored until the resistance reaches a desired level. The focused ion beam is redirected onto a second area of the substrate which includes the second MR element. The electrical resistance of the second MR element is monitored as the focused ion beam acts on the second MR element until the resistance of the MR element reaches a desired level. Using this process, the resistivity of individual MR elements within the substrate can be tightly controlled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.