Semiconductor structure and method of making contacts in a semiconductor structure
US6734108B1 · kind B1 · utility
10Cited by
10References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 27, 1999 |
| Grant date | May 11, 2004 |
| Priority date | — |
| Expiry date | Sep 27, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment (300), a method of forming a self-aligned contact can include forming adjacent conducting structures with sidewalls (302). A first insulating layer may then be formed without first forming a liner (304), such as a liner that is conventionally formed to protect underlying conducting structures and/or a substrate. A contact hole may then be etched between adjacent conducting structures (306). Contact structures may then be formed (308).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.