Lateral double diffused metal oxide semiconductor (LDMOS) device with aligned buried layer isolation layer
US6734493B2 · kind B2 · utility
13Cited by
2References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 8, 2002 |
| Grant date | May 11, 2004 |
| Priority date | — |
| Expiry date | Feb 9, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/603
Abstract
Within both a lateral double diffused metal oxide semiconductor (LDMOS) device, and a method for fabrication thereof, there is formed a buried layer of polarity equivalent with a well region within which is formed a drain region. The buried layer is formed laterally aligned with respect to the well region, and separated therefrom by a portion of an epitaxial layer. The lateral double diffused metal oxide semiconductor (LDMOS) device exhibits enhanced electrical performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.