Thin film transistor and use of same
US6734505B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 2002 |
| Grant date | May 11, 2004 |
| Priority date | — |
| Expiry date | Aug 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/12
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Disclosed are a thin film transistor capable of controlling gray level of an organic LED element by discretely controlling current levels, a method of manufacturing the thin film transistor, an array substrate including the thin film transistor, a display device, and a method of driving the display device. The thin film transistor of the present invention includes an active layer formed on an insulating substrate, a plurality of insulating layers formed oppositely to each other with the active layer interposed therebetween, a first gate electrode and a second gate electrode formed adjacently to the insulating layers respectively, and wiring connected to the first and second gate electrodes respectively, the wiring controlling respective potentials of the first and second gate electrodes independently of each other. The area of the first gate electrode is different from the area of the second gate electrode, and current levels can be discretely controlled in at least four levels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.