Method of fabricating a trench structure substantially filled with high-conductivity material
US6737323B2 · kind B2 · utility
33Cited by
13References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 11, 2001 |
| Grant date | May 18, 2004 |
| Priority date | — |
| Expiry date | Jun 11, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28194
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A trench structure that is substantially filled with high-conductivity material such as refractory metal particularly suitable for fast switching trench MOSFET applications. The trench is first lined by a dielectric material such as silicon dioxide. A layer of polysilicon is then formed on the dielectric material and provides buffering for stress relief. The trench is then filled substantially with refractory metal such as tungsten.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.