Method for forming an interated resister having aligned body and contact
US6737327B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2002 |
| Grant date | May 18, 2004 |
| Priority date | — |
| Expiry date | Apr 19, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/412
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for forming a resistor includes causing a semiconductor layer to have a first resistance, forming a first mask on the semiconductor layer, causing portions of the semiconductor layer left exposed by the first mask to have a second resistance that is lower than the first resistance, forming a second mask on the first mask and on the semiconductor layer, removing portions of the first mask and the semiconductor layer left exposed by the second mask, removing the second mask, and causing portions of the semiconductor layer exposed by the removing of the second mask to have a third resistance that is lower than the second resistance. Because a resistor formed by such a process can include an aligned body and contact, it often occupies a smaller area than prior integrated resistors having a similar resistance value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.