Micromachined infrared sensitive pixel and infrared imager including same
US6737648B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2001 |
| Grant date | May 18, 2004 |
| Priority date | — |
| Expiry date | Sep 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An infrared (IR) sensitive pixel and an IR imager including the same. According to one embodiment, the pixel includes a substrate assembly having a cavity defined by at least one sidewall and a cantilevered beam connected to the substrate assembly and disposed in the cavity. The cantilevered beam includes a first spring portion and a first capacitor plate portion, wherein the first spring portion includes at least two materials having different coefficients of thermal expansion. The pixel further includes a second capacitor plate portion, such that incident IR radiation causes the first spring portion of the cantilevered beam to move laterally relative to the sidewall, thereby creating a variable capacitance between the first capacitor plate portion of the cantilevered beam and the second capacitor plate portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.