Method for controlling a unipolar semiconductor laser
US6738404B1 · kind B1 · utility
1Cited by
7References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 13, 2000 |
| Grant date | May 18, 2004 |
| Priority date | — |
| Expiry date | Jun 13, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/1228
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of controlling a unipolar semiconductor laser in the 4-12 &mgr;m mid-infrared range. This is an optical control method, unlike a purely electrical, power control method which injects a relatively large flux of electrons. The optical control method may advantageously include two optical beams of the same wavelength and a device for making those beams interfere in the active layer of the laser, the optical control beams having a much shorter wavelength than the wavelength of the unipolar laser and having a frequency capable of being modulated more rapidly than that of the laser.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.