Process for coating silicon shot with dopant for addition of dopant in crystal growth
US6740158B2 · kind B2 · utility
5Cited by
9References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 9, 2002 |
| Grant date | May 25, 2004 |
| Priority date | — |
| Expiry date | Jun 4, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B15/04
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An inexpensive method of coating silicon shot with boron atoms comprises (1) immersing silicon shot in a boron dopant spin-on solution comprising a borosilicate, a polymer precursor, and a volatile solvent, and (2) removing the solvent so as to leave a polymeric coating containing borosilicate on the shot. A precise amount of this coated shot may then be mixed with a measured quantity of silicon pellets and the resulting mixture may then be melted to provide a boron-doped silicon melt for use in growing p-type silicon bodies that can be converted to substrates for photovoltaic solar cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.