Rectangular magnetron sputtering cathode with high target utilization
US6740212B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 18, 2002 |
| Grant date | May 25, 2004 |
| Priority date | — |
| Expiry date | Oct 30, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3407
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a novel rectangular sputtering magnetron cathode that significantly improves target utilization and sputtering efficiency. Different from conventional magnatron design that considers only magnetic field distribution and is, therefore, qualitive or empirical, the present magnetron cathode is developed through computer-aided simulation of plasma discharge. The magnetic and electric fields are optimized in a combined manner by quantitatively simulating electron trajectories, electron/Ar collisions, space charge distribution, and target erosion profile. Sputtering tests with Cu target show a target utilization of 55%˜65%, much higher than conventional target utilization which is about 40%. Meanwhile, high sputtering efficiency is achieved by maintaining a relatively strong magnetic field over the surface of the target, which can be thicker than 12 mm, as a result of effective confinement of high-energy electrons.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.