AQUEOUS DISPERSION, AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING USED FOR MANUFACTURE OF SEMICONDUCTOR DEVICES, METHOD FOR MANUFACTURE OF SEMICONDUCTOR DEVICES, AND METHOD FOR FORMATION OF EMBEDDED WRITING
US6740590B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 17, 2000 |
| Grant date | May 25, 2004 |
| Priority date | — |
| Expiry date | Mar 17, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The object of the present invention is to provide an aqueous dispersion that can give the required properties for a wide range of uses including electronic materials, magnetic materials, optical materials and polishing materials, and to provide an aqueous dispersion for chemical mechanical polishing (CMP slurry) that gives an adequate polishing rate without creating scratches in polishing surfaces. Another object of the present invention is, to provide a method for manufacture of semiconductor devices using a CMP slurry that can control progressive erosion due to scratches and the like during polishing and that can achieve efficient flattening of working films, and to provide a method for formation of embedded wiring. The aqueous dispersion or CMP slurry of the present invention contains polymer particles made of thermoplastic resins or the like, and inorganic particles made of alumina, silica or the like, wherein the zeta potentials of the polymer particles and inorganic particles are of opposite signs, and they are bonded by electrostatic force to form aggregates as composite particles. The aggregates are subjected to ultrasonic wave irradiation or shear stress with a homogenizer…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.