Transistor provided with first and second gate electrodes with channel region therebetween
US6740938B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2002 |
| Grant date | May 25, 2004 |
| Priority date | — |
| Expiry date | Apr 10, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/441
Abstract
This invention is intended to provide a technique for improving characteristics of a TFT and realizing a structure of the TFT optimum for driving conditions of a pixel section and a driving circuit by using a small number of photomasks. The TFT includes a first electrode, a first insulating film put between a semiconductor film and the first electrode, a second electrode, and a second insulating film put between the semiconductor film and the second electrode. The first electrode and the second electrode are overlapped with each other, with a channel formation region of the semiconductor film put between the first electrode and the second electrode, and a constant voltage is always applied to the first electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.