Insulating layers in semiconductor devices having a multi-layer nanolaminate structure of SiNx thin film and BN thin film and methods for forming the same
US6740977B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2003 |
| Grant date | May 25, 2004 |
| Priority date | — |
| Expiry date | Apr 24, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19041
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a novel insulating layer for use in semiconductor devices, the insulating layer having a multi-layer nanolaminate structure consisting of alternating boron nitride thin films and silicon nitride thin films, each of a controlled, desired thickness, together with methods for forming the same.The insulating layer of the present invention has a multi-layer nanolaminate structure consisting of alternating boron nitride thin films and silicon nitride thin filmsformed by the steps of: (a) depositing a silicon nitride thin film on a wafer, (b) depositing a boron nitride thin film on the silicon nitride thin film, and (c) forming the multi-layer nanolaminate thin film by alternately repeating steps (a) and (b).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.