Semiconductor integrated circuit device and method of manufacturing the same
US6741118B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2002 |
| Grant date | May 25, 2004 |
| Priority date | — |
| Expiry date | Nov 27, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M3/071
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor integrated circuit device includes a charge pump circuit for outputting a predetermined negative voltage to a negative voltage node, a voltage detection circuit for generating a first detection signal when the voltage of the negative voltage node has reached a first detection voltage and for generating a second detection signal when the voltage of the negative voltage node has reached a second detection voltage, an oscillator that is driven in response to the first detection signal so as to generate a signal for driving the charge pump circuit, and a negative voltage raising circuit that has an output terminal connected to the negative voltage node, and that is driven in response to the second detection signal so as to raise the voltage of the negative voltage node through the output of its output terminal. The VBB voltage can be increased rapidly and can be controlled at higher speeds, thereby increasing the stability of the voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.