Apparatus for applying thin layers to a substrate
US6743341B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2002 |
| Grant date | Jun 1, 2004 |
| Priority date | — |
| Expiry date | Jun 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/347
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A process gas source (16) is connected to the vacuum chamber (5), and a metering valve (12) actuated by an automatic controller is installed between the vacuum chamber (5) and the process gas source (16). A potentiometric measurement electrode compares the amount of a gas in the vacuum chamber (5) with a reference gas by way of a reference electrode or with a solid body substituting for the reference electrode and sends a signal to automatic control unit (14), which contains a signal amplifier. The control unit then drives the generator of the power supply or the metering valve for the process gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.