Method for combined fabrication of indium gallium arsenide/indium phosphide avalanche photodiodes and P-I-N photodiodes
US6743657B2 · kind B2 · utility
7Cited by
5References
20Claims
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Key dates
| Filing date | Mar 24, 2003 |
| Grant date | Jun 1, 2004 |
| Priority date | — |
| Expiry date | Mar 24, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
An Indium/Gallium/Arsenide (InGaAs) detector having avalanche photodiodes (APD's) and p-i-n photodiodes on a single chip is provided. A method of fabricating the InGaAs device is also provided. The bias on the APD and p-i-n photodiodes are separately controlled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.