Silicon-on-insulator wafer for RF integrated circuit
US6743662B2 · kind B2 · utility
20Cited by
22References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2002 |
| Grant date | Jun 1, 2004 |
| Priority date | — |
| Expiry date | Sep 17, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/012
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An RF semiconductor device is fabricated from a starting substrate comprising a polysilicon handle wafer, a buried oxide layer over the polysilicon handle wafer, and a silicon layer over the oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.