Thermoelectric material improved in figure of merit, process for producing thereof and peltier module using the same
US6743973B2 · kind B2 · utility
14Cited by
2References
29Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 29, 2001 |
| Grant date | Jun 1, 2004 |
| Priority date | — |
| Expiry date | Jan 17, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N10/853
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Thermoelectric material of (Bi, Sb)(Te, Se) system is produced through a liquid quenching method and an extrusion from a die unit having an inlet portion and an outlet portion crossing each other at 30-150 degrees so that the crystal grains have an average grain size equal to or less than 30 microns and (001) planes mostly oriented in parallel to a direction in which electric current to flow, thereby achieving the figure of merit equal to or greater than 3.0×10−3/K.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.