Single electron devices
US6744065B1 · kind B1 · utility
6Cited by
1References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 2, 2000 |
| Grant date | Jun 1, 2004 |
| Priority date | — |
| Expiry date | May 2, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A single electron tunnelling device is formed by positioning between first and second electrodes a particle formed of a material having a first conductivity characteristic having a surface layer of a material of a second conductivity characteristic, the thickness of said layer being sufficiently small to support quantum mechanical tunnelling therethrough.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.