Nitride semiconductor element with a supporting substrate
US6744071B2 · kind B2 · utility
130Cited by
3References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2003 |
| Grant date | Jun 1, 2004 |
| Priority date | — |
| Expiry date | Jan 27, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/841
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A highly efficient nitride semiconductor element having an opposed terminal structure, whose terminals face each other. The nitride semiconductor element includes a conductive layer, a first terminal, a nitride semiconductor with a light-emitting layer, and a second terminal, on a supporting substrate successively. The first terminal and a first insulating protect layer are interposed between the conductive layer and a first conductive type nitride semiconductor layer of the nitride semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.