High voltage switch circuitry
US6744660B2 · kind B2 · utility
5Cited by
17References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2003 |
| Grant date | Jun 1, 2004 |
| Priority date | — |
| Expiry date | Apr 17, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method of setting a state of a one-time programmable memory device having at least one memory cell with a thin gate-ox fuse element having an oxide of about 2.5 nm thick or less using a high voltage switch. The method comprises switching in a high programming voltage into the memory cell using such high voltage switch, setting the state of the thin gate-ox fuse element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.