Edge emitting lasers using photonic crystals
US6744804B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2002 |
| Grant date | Jun 1, 2004 |
| Priority date | — |
| Expiry date | Jul 18, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/5045
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An edge emitting laser that emits a single mode using photonic mirrors. An edge emitting laser includes an active region that is formed between an n-type semiconductor material and a p-type semiconductor material. Photonic mirrors are formed in the laser to define a gain cavity and an external cavity. The gain cavity is bounded by a cleaved facet and a photonic mirror or by a pair of photonic mirrors. The external cavity is bounded by the photonic mirror of the gain cavity and either a cleaved facet or another photonic mirror. The mode emitted by the laser is determined by characteristics of the photonic mirrors, including the periodic cavity structures of the mirrors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.