Low Vt transistor substitution in a semiconductor device
US6745371B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2002 |
| Grant date | Jun 1, 2004 |
| Priority date | — |
| Expiry date | Jun 6, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/327
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Performance of an integrated circuit design, whether embodied as a design encoding or as a fabricated integrated circuit, can be improved by selectively substituting low Vt transistors in a way that prioritizes substitution opportunities based on multi-path timing analysis and evaluates such opportunities based on one or more substitution constraints. By valuing, in a prioritization of substitution opportunities, contributions for all or substantially all timing paths through the substitution opportunity that violate a max-time constraint, repeated passes through a timing analysis phase can be advantageously avoided or limited. In addition, by recognizing one or more constraints on actual low Vt substitutions, particular noise-oriented constraints, the scope of post substitution design analysis can be greatly reduced. In some realizations, substitutions are performed so long as a leakage current budget is not expended. As a result, integrated circuit designs prepared in accordance with the described techniques may exhibit substantial cycle time improvements through judicious selection of gate instances for substitution. In some realizations, improved yields of high grade parts may …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.