Ferroelectric vapor deposition targets
US6746619B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2003 |
| Grant date | Jun 8, 2004 |
| Priority date | — |
| Expiry date | Apr 23, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/891
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention includes a ferroelectric physical vapor deposition target having a predominate grain size of less than or equal to 1.0 micron, and a density of at least 95% of maximum theoretical density. A method of making the target includes hot pressing a prereacted ferroelectric powder predominately including individual prereacted ferroelectric particles having a maximum straight linear dimension of less than or equal to 100 nanometers to form a physical vapor deposition target of desired shape. In one implementation, the prereacted ferroelectric powder is hot pressed at a maximum pressing temperature which is at least 200° C. lower than would be required to produce at least 85% of maximum theoretical density in hot pressing the same powder but having a predominate particle size maximum straight linear dimension of at least 1.0 micron at the same pressure and for the same amount of time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.