Method for manufacture of a solar cell

US6746709B2 · kind B2 · utility

Assignee

• RWE Schott Solar GmbH · DE

Inventors

• Thomas Lauinger · Niedernberg, DE
• Ingo Schwirtlich · Miltenberg, DE
• Jens Dirk Moschner · Tarp, DE

Key dates

• Filing date: Oct 18, 2002
• Grant date: Jun 8, 2004
• Expiry date: Oct 18, 2022

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

The invention relates to a method for manufacture of a semiconductor component by the formation of a hydrogenous layer containing silicon on a substrate comprising or containing silicon such as a wafer or film. In order to achieve a good surface and volume passivation, it is proposed that during formation of the siliceous layer in the form of SiNxOy with 0<x&lE;1.5 and 0&lE;y&lE;2 one or more catalytically acting dopants are selectively added into the layer which release hydrogen from the SiNxOy layer. The concentration C of the dopants is 1&times;1014 cm3&lE;C&lE;1021 cm3.