Method and device for controlling the thickness of a layer of an integrated circuit in real time
US6746881B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 17, 2000 |
| Grant date | Jun 8, 2004 |
| Priority date | — |
| Expiry date | May 12, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/26
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and a device for measuring in real time the thickness of an integrated circuit layer with the layer to be measured being deposited on an underlying layer. During an engraving operation, the advance of the engraving front generated during the engraving operation is monitored by plotting the optical emission spectrum of the product of the engraving reaction in real time on a spectral component of the underlying layer. A time distribution of the optical emission amplitude of the engraving reaction product is established and the transition of the optical emission amplitude on the distribution as the engraving front passes from the layer to be measured to the underlying layer as established. The thickness of the layer to be measured is thus computed on the basis of the distribution and the transition by a correlation with the transition on the distribution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.